description t h e 2 n 6 0 is a hi g h vo l ta g e p o w e r mo s f e t a n d i s designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. features * r ds(on) = 5 @v gs = 10v * ultra low gate charge (typical 9.0nc) * low reverse transfer capacitance (c rss = typical 5.0 pf) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness symbol ? ordering information pin assi g n me n t 1 2 3 packing nj 2 n6 0 - li t o - 22 0 nj 2 n6 0 - b l t o - 22 0 nj 2 n6 0 f - l i g d s t ube nj 2 n6 0 a - li nj 2 n6 0 d - t r t o -252 nj 2 n6 0 d - li t o -252 note: pin assignment: g: gate d: drain s: source g d s t ube package o r d e r i ng n u m b er g d s t a p e r ee g d s t a p e b o x g d s b u l k g d s t ube t o - 2 5 1 1 1 1 1 t o -2 2 0 t o -2 5 1 t o -2 52 2 . 0 a 60 0 v n - c h a n n e l p o we r m o s f e t nj 2 n 6 0 p o we r m o s fe t t o -2 2 0 f t o -2 2 0 f nj
absolute maximum ratings ( t c = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 2.0 a drain current continuous i d 2.0 a pulsed (note 2) i dm 8.0 a avalanche energy single pulsed (note 3) 2n60 e as 140 mj repetitive (note 2) e ar 4.5 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation t o - 2 2 0 p d t c = 25 54 w t o - 2 2 0 f t o - 2 5 1 t o - 2 5 2 4 0 w 2 2 w junction temperature t j +150 operating temperature t opr -55 ~ +150 storage temperature t stg -55 ~ +150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. repetitive rating : pulse width limited by t j 3. l=64mh, i as =2.0a, v dd =50v, r g =25 , starting t j = 25c 4. i sd 2.4a, di/dt 200a/ s, v dd bv dss , starting t j = 25c thermal data parameter package symbol ratings unit junction to ambient t o - 2 2 0 ja 62.5 /w t o - 2 2 0 f /w t o - 2 5 1 t o - 2 5 2 100 /w junction to case t o - 2 2 0 jc 2.32 /w t o - 2 2 0 f 5 . 5 /w t o - 2 5 1 t o - 2 5 2 2. 8 7 /w nj 2 n 6 0 p o we r m o s f e t 62.5
electrical characteristics (t j =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600v, v gs = 0v 10 a gate-source leakage current forward i gss v gs = 30v, v ds = 0v 100 na reverse v gs = -30v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 0.4 v/ on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance 2n60 r ds(on) v gs = 10v, i d =1a 3.6 5 dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f =1mhz 270 350 pf output capacitance c oss 40 50 pf reverse transfer capacitance c rss 5 7 pf switching characteristics turn-on delay time t d ( on ) v dd =300v, i d =2.4a, r g =25 (note 1, 2) 10 30 ns turn-on rise time 2n60 t r 40 60 ns turn-off delay time t d ( off ) 20 50 ns turn-off fall time 2n60 t f 50 60 ns total gate charge q g v ds =480v, v gs =10v, i d =2.4a (note 1, 2) 9.0 11 nc gate-source charge q gs 1.6 nc gate-drain charge q gd 4.3 nc drain-source diode characteristics drain-source diode forward voltage v sd v gs = 0 v, i sd = 2.0 a 1.4 v continuous drain-source current i sd 2.0 a pulsed drain-source current i sm 8.0 a reverse recovery time t r r v gs = 0 v, i sd = 2.4a, di/dt = 100 a/ s (note 1) 180 ns reverse recovery charge q rr 0.72 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature nj 2 n 60 p o we r m o s f e t
test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms nj 2 n 60 p o we r m o s f e t
test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms nj 2 n 60 p o we r m o s f e t
typical characteristics drain current vs. drain-source breakdown voltage drain-source breakdown voltage, bv dss (v) 0.50 drain current vs. gate threshold voltage gate threshold voltage, v th (v) 1.5 2 4 1 3 0 50 100 150 200 250 300 0 200 600 800 1000 400 0 50 100 150 200 250 300 2.5 3.5 nj 2 n 60 p o we r m o s f e t
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